ULTRA-HIGH CURRENT GAIN INGAASP INP HETEROJUNCTION BIPOLAR-TRANSISTOR

被引：9

作者：

OHISHI, T

ABE, Y

SUGIMOTO, H

OHTSUKA, K

MATSUI, T

机构：

[1] Central Research Laboratory Mitsubishi Electric Corporation, Amagasaki, 8-1-1 Tukaguchi-honmachi

[2] Optoelectronic and Microwave Devices R&D Laboratory, Mitsubishi Electric Corporation, Itami, Hyogo 664

来源：

ELECTRONICS LETTERS | 1990年 / 26卷 / 06期

关键词：

Heterojunction bipolar transist;

D O I：

10.1049/el:19900256

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A maximum DC current gain of 112000 was obtained by a double-layer base HBT with a thin base layer of 0-1 µm thickness. A breakdown voltage with a common-emmitter configuration was found to be 1-3 V, which is smaller than for conventional HBTs owing to the ultrahigh current gain and a carrier multiplication at a base-collector junction. © 1990, The Institution of Electrical Engineers. All rights reserved.

引用

页码：392 / 393

页数：2

共 10 条

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