GAINASP-INP HETEROJUNCTION BIPOLAR-TRANSISTORS WITH A DOUBLE-LAYER BASE

[1] A STRIPE-GEOMETRY INGAASP/INP HETEROJUNCTION BIPOLAR-TRANSISTOR SUITABLE FOR OPTICAL INTEGRATION [J]. IEEE ELECTRON DEVICE LETTERS, 1987, 8 (05) : 191 - 193

[2] INGAASP/INP HETERO JUNCTION BIPOLAR-TRANSISTOR WITH HIGH-CURRENT GAIN [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1986, 25 (06): : L504 - L506

[3] OMCVD-GROWN INP/GAINAS HETEROJUNCTION BIPOLAR-TRANSISTORS [J]. ELECTRONICS LETTERS, 1987, 23 (24) : 1298 - 1299

[4] DOUBLE-HETEROJUNCTION BIPOLAR-TRANSISTORS IN INP/GALNAS GROWN BY METAL ORGANIC-CHEMICAL VAPOR-DEPOSITION [J]. ELECTRONICS LETTERS, 1987, 23 (18) : 931 - 932

[5] IMPLANTED PLANAR GALNASP/INP HETEROBIPOLAR TRANSISTOR [J]. ELECTRONICS LETTERS, 1986, 22 (22) : 1191 - 1193

[6] HETEROSTRUCTURE BIPOLAR-TRANSISTORS - WHAT SHOULD WE BUILD [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1983, 1 (02): : 126 - 130

[7] HIGH-GAIN INGAAS/INP HETEROSTRUCTURE BIPOLAR-TRANSISTORS GROWN BY GAS SOURCE MOLECULAR-BEAM EPITAXY [J]. APPLIED PHYSICS LETTERS, 1986, 49 (17) : 1112 - 1114

[8] Ohnaka K., 1988, Transactions of the Institute of Electronics, Information and Communication Engineers C, VJ71C, P748

[9] NPNN DOUBLE-HETEROJUNCTION BIPOLAR-TRANSISTOR ON INGAASP/INP [J]. APPLIED PHYSICS LETTERS, 1985, 47 (01) : 28 - 30

[1] A STRIPE-GEOMETRY INGAASP/INP HETEROJUNCTION BIPOLAR-TRANSISTOR SUITABLE FOR OPTICAL INTEGRATION [J]. IEEE ELECTRON DEVICE LETTERS, 1987, 8 (05) : 191 - 193

[2] INGAASP/INP HETERO JUNCTION BIPOLAR-TRANSISTOR WITH HIGH-CURRENT GAIN [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1986, 25 (06): : L504 - L506

[3] OMCVD-GROWN INP/GAINAS HETEROJUNCTION BIPOLAR-TRANSISTORS [J]. ELECTRONICS LETTERS, 1987, 23 (24) : 1298 - 1299

[4] DOUBLE-HETEROJUNCTION BIPOLAR-TRANSISTORS IN INP/GALNAS GROWN BY METAL ORGANIC-CHEMICAL VAPOR-DEPOSITION [J]. ELECTRONICS LETTERS, 1987, 23 (18) : 931 - 932

[5] IMPLANTED PLANAR GALNASP/INP HETEROBIPOLAR TRANSISTOR [J]. ELECTRONICS LETTERS, 1986, 22 (22) : 1191 - 1193

[6] HETEROSTRUCTURE BIPOLAR-TRANSISTORS - WHAT SHOULD WE BUILD [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1983, 1 (02): : 126 - 130

[7] HIGH-GAIN INGAAS/INP HETEROSTRUCTURE BIPOLAR-TRANSISTORS GROWN BY GAS SOURCE MOLECULAR-BEAM EPITAXY [J]. APPLIED PHYSICS LETTERS, 1986, 49 (17) : 1112 - 1114

[8] Ohnaka K., 1988, Transactions of the Institute of Electronics, Information and Communication Engineers C, VJ71C, P748

[9] NPNN DOUBLE-HETEROJUNCTION BIPOLAR-TRANSISTOR ON INGAASP/INP [J]. APPLIED PHYSICS LETTERS, 1985, 47 (01) : 28 - 30