IMPLANTED PLANAR GALNASP/INP HETEROBIPOLAR TRANSISTOR

被引：3

作者：

KRAUTLE, H

机构：

来源：

关键词：

D O I：

10.1049/el:19860816

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1191 / 1193

页数：3

共 10 条

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[3] PROTON-BOMBARDMENT IN INP
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[4] FAST RESPONSE INP-INGAASP HETEROJUNCTION PHOTOTRANSISTORS
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[J]. ELECTRONICS LETTERS, 1981, 17 (05) : 178 - 179
[5] PLANAR INGAAS/INP PINFET FABRICATED BY BE ION-IMPLANTATION
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[J]. ELECTRONICS LETTERS, 1984, 20 (22) : 947 - 948
[6] PROTON-BOMBARDMENT IN N-TYPE AND P-TYPE GA0.47IN0.53AS
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[J]. SOLID-STATE ELECTRONICS, 1983, 26 (10) : 1033 - &
[7] LATERAL PNP GAAS BIPOLAR-TRANSISTOR WITH MINIMIZED SUBSTRATE CURRENT
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NAROZNY, P
BENEKING, H
[J]. ELECTRON DEVICE LETTERS, 1982, 3 (10): : 315 - 317
[8] KRAUTLE H, 1986, UNPUB P ICSICT
[9] Nickel H., 1983, Journal of Optical Communications, V4, P63, DOI 10.1515/JOC.1983.4.2.63
[10] ANNEALING OF DAMAGE IN SE+-IMPLANTED INDIUM-PHOSPHIDE
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[J]. SOLID-STATE ELECTRONICS, 1984, 27 (07) : 677 - 686