SELF-ENERGY SHIFTS IN HEAVILY DOPED, POLAR SEMICONDUCTORS

被引：41

作者：

SERNELIUS, BE

机构：

[1] OAK RIDGE NATL LAB,DIV SOLID STATE,OAK RIDGE,TN 37831

[2] UNIV TENNESSEE,DEPT PHYS,KNOXVILLE,TN 37996

来源：

PHYSICAL REVIEW B | 1987年 / 36卷 / 09期

关键词：

D O I：

10.1103/PhysRevB.36.4878

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

收藏

页码：4878 / 4887

页数：10

相关论文

共 25 条

[1] HEAVILY DOPED SEMICONDUCTORS AND DEVICES
ABRAM, RA
REES, GJ
WILSON, BLH
[J]. ADVANCES IN PHYSICS, 1978, 27 (06) : 799 - 892
[2] ACCURACY OF VARIOUS THEORIES OF BAND-GAP NARROWING IN P-DOPED SEMICONDUCTORS
BARDYSZEWSKI, W
YEVICK, D
[J]. PHYSICAL REVIEW B, 1987, 35 (02): : 619 - 625
[3] BAND-GAP NARROWING IN HEAVILY DOPED MANY-VALLEY SEMICONDUCTORS
BERGGREN, KF
SERNELIUS, BE
[J]. PHYSICAL REVIEW B, 1981, 24 (04): : 1971 - 1986
[4] BAND-GAP NARROWING FROM LUMINESCENCE IN P-TYPE SI
DUMKE, WP
[J]. JOURNAL OF APPLIED PHYSICS, 1983, 54 (06) : 3200 - 3202
[5] COMPARISON OF BAND-GAP SHRINKAGE OBSERVED IN LUMINESCENCE FROM N+-SI WITH THAT FROM TRANSPORT AND OPTICAL-ABSORPTION MEASUREMENTS
DUMKE, WP
[J]. APPLIED PHYSICS LETTERS, 1983, 42 (02) : 196 - 198
[6] FLUORESCENCE-SPECTRUM OF HEAVILY DOPED CADMIUM-SULFIDE
GIRVIN, SM
[J]. PHYSICAL REVIEW B, 1978, 17 (04): : 1877 - 1883
[7] OPTICAL-PROPERTIES OF TRANSPARENT AND INFRA-RED-REFLECTING ITO FILMS IN THE 0.2-50-MU-M RANGE
HAMBERG, I
GRANQVIST, CG
BERGGREN, KF
SERNELIUS, BE
ENGSTROM, L
[J]. VACUUM, 1985, 35 (06) : 207 - 209
[8] BAND-GAP WIDENING IN HEAVILY SN-DOPED IN2O3
HAMBERG, I
GRANQVIST, CG
BERGGREN, KF
SERNELIUS, BE
ENGSTROM, L
[J]. PHYSICAL REVIEW B, 1984, 30 (06): : 3240 - 3249
[9] OPTICAL-PROPERTIES OF TRANSPARENT AND HEAT-REFLECTING INDIUM TIN OXIDE-FILMS - THE ROLE OF IONIZED IMPURITY SCATTERING
HAMBERG, I
GRANQVIST, CG
[J]. APPLIED PHYSICS LETTERS, 1984, 44 (08) : 721 - 723
[10] MADELUNG O, 1982, LANDOLTBORNSTEIN N B, V17