EXCIMER LASER EXPOSURE OF AG2SE/GESE2 - HIGH CONTRAST EFFECTS

被引：9

作者：

POLASKO, KJ

PEASE, RFW

MARINERO, EE

CAGAN, MR

机构：

[1] IBM CORP,SAN JOSE,CA 95193

[2] STANFORD UNIV,STANFORD,CA 94305

[3] XEROX CORP,PALO ALTO RES CTR,PALO ALTO,CA 94304

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1985年 / 3卷 / 01期

关键词：

D O I：

10.1116/1.583254

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：319 / 322

页数：4

共 11 条

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ONG E, 1982, P ELECTROCHEM SOC, V829, P71

[10] DEEP UV EXPOSURE OF AG2SE/GESE2 UTILIZING AN EXCIMER LASER [J].

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MARINERO, EE .

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