DEEP UV EXPOSURE OF AG2SE/GESE2 UTILIZING AN EXCIMER LASER

被引：20

作者：

POLASKO, KJ

EHRLICH, DJ

TSAO, JY

PEASE, RFW

MARINERO, EE

机构：

[1] MIT,LINCOLN LAB,LEXINGTON,MA 02173

[2] DEPT CHEM,STANFORD,CA 94305

来源：

IEEE ELECTRON DEVICE LETTERS | 1984年 / 5卷 / 01期

关键词：

D O I：

10.1109/EDL.1984.25818

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：24 / 26

页数：3

共 11 条

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[7] DEEP UV SUB-MICRON LITHOGRAPHY BY USING A PULSED HIGH-POWER EXCIMER LASER [J].

KAWAMURA, Y ;

TOYODA, K ;

NAMBA, S .

JOURNAL OF APPLIED PHYSICS, 1982, 53 (09) :6489-6490

[8] EFFECTIVE DEEP ULTRAVIOLET PHOTOETCHING OF POLY(METHYL METHACRYLATE BY AN EXCIMER LASER [J].

KAWAMURA, Y ;

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NAMBA, S .

APPLIED PHYSICS LETTERS, 1982, 40 (05) :374-375

[9]

ONG E, 1982, P ELECTROCHEM SOC, V82, P71

[10]

POLASKO KJ, 1983, UNPUB SPIE P, V393

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