INTERFACE EFFECTS IN TITANIUM AND HAFNIUM SCHOTTKY BARRIERS ON SILICON

被引:50
作者
TAUBENBLATT, MA
THOMSON, D
HELMS, CR
机构
关键词
D O I
10.1063/1.94926
中图分类号
O59 [应用物理学];
学科分类号
摘要
引用
收藏
页码:895 / 897
页数:3
相关论文
共 24 条
[1]   DETERMINATION OF HAFNIUM-P-TYPE SILICON SCHOTTKY-BARRIER HEIGHT [J].
BEGUWALA, M ;
CROWELL, CR .
JOURNAL OF APPLIED PHYSICS, 1974, 45 (06) :2792-2794
[2]   GROWTH KINETICS OBSERVED IN FORMATION OF METAL SILICIDES ON SILICON [J].
BOWER, RW ;
MAYER, JW .
APPLIED PHYSICS LETTERS, 1972, 20 (09) :359-&
[3]   CHEMICAL BONDING AND REACTIONS AT TI/SI AND TI/OXYGEN/SI INTERFACES [J].
BUTZ, R ;
RUBLOFF, GW ;
HO, PS .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1983, 1 (02) :771-775
[4]   STUDIES OF TUNNEL MOS DIODES .1. INTERFACE EFFECTS IN SILICON SCHOTTKY DIODES [J].
CARD, HC ;
RHODERICK, EH .
JOURNAL OF PHYSICS D-APPLIED PHYSICS, 1971, 4 (10) :1589-+
[5]   THE FORMATION OF THE SCHOTTKY-BARRIER AT THE V/SI INTERFACE [J].
CLABES, JG ;
RUBLOFF, GW ;
REIHL, B ;
PURTELL, RJ ;
HO, PS ;
ZARTNER, A ;
HIMPSEL, FJ ;
EASTMAN, DE .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1982, 20 (03) :684-687
[6]  
COHEN J, 1968, AFCRL680651 HEW PACK
[7]  
COWLEY AM, 1969, SOLID ST ELECTRON, V12, P403
[8]   PHOTOELECTRIC WORK FUNCTIONS OF TRANSITION, RARE-EARTH, AND NOBLE METALS [J].
EASTMAN, DE .
PHYSICAL REVIEW B, 1970, 2 (01) :1-&
[9]   The analysis of photoelectric sensitivity curves for clean metals at various temperatures [J].
Fowler, RH .
PHYSICAL REVIEW, 1931, 38 (01) :45-56
[10]   SCHOTTKY BARRIERS - AN EFFECTIVE WORK FUNCTION MODEL [J].
FREEOUF, JL ;
WOODALL, JM .
APPLIED PHYSICS LETTERS, 1981, 39 (09) :727-729