PROPERTIES OF CHEMICAL VAPOR-DEPOSITED TETRAETHYLORTHOSILICATE OXIDES - CORRELATION WITH DEPOSITION PARAMETERS, ANNEALING, AND HYDROGEN CONCENTRATION

被引:30
作者
NGUYEN, AM [1 ]
MURARKA, SP [1 ]
机构
[1] RENSSELAER POLYTECH INST,CTR INTEGRATED ELECTR,DEPT MAT ENGN,TROY,NY 12181
来源
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1990年 / 8卷 / 03期
关键词
D O I
10.1116/1.585015
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
引用
收藏
页码:533 / 539
页数:7
相关论文
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[11]   HYDROGEN CONCENTRATION PROFILES IN AS-DEPOSITED AND ANNEALED PHOSPHORUS-DOPED SILICON DIOXIDE FILMS [J].
XIE, JZ ;
MURARKA, SP .
APPLIED PHYSICS LETTERS, 1988, 53 (21) :2036-2038