PHOTOLUMINESCENT PROPERTIES OF PARA-GAAS ELECTRODES RELATED TO THE PHOTOCURRENT ANOMALY - DETERMINATION OF SURFACE ELECTRON-CAPTURE VELOCITIES AND DEPLETION WIDTHS IN PHOTOELECTROCHEMICAL CELLS

被引：20

作者：

JOHNSON, PB ^{[1
]}

MCMILLAN, CS ^{[1
]}

ELLIS, AB ^{[1
]}

HOBSON, WS ^{[1
]}

机构：

[1] UNIV WISCONSIN,DEPT CHEM,MADISON,WI 53706

来源：

JOURNAL OF APPLIED PHYSICS | 1987年 / 62卷 / 12期

关键词：

D O I：

10.1063/1.338998

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

收藏

页码：4903 / 4908

页数：6

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