TEMPERATURE AND INTENSITY DEPENDENCE OF INTERSUBBAND RELAXATION RATES FROM PHOTOVOLTAGE AND ABSORPTION

被引：71

作者：

HEYMAN, JN

UNTERRAINER, K

CRAIG, K

GALDRIKIAN, B

SHERWIN, MS

CAMPMAN, K

HOPKINS, PF

GOSSARD, AC

机构：

[1] UNIV CALIF SANTA BARBARA,DEPT PHYS,SANTA BARBARA,CA 93106

[2] UNIV CALIF SANTA BARBARA,CTR FREE ELECTRON LASER STUDIES,SANTA BARBARA,CA 93106

[3] UNIV CALIF SANTA BARBARA,DEPT MAT,SANTA BARBARA,CA 93106

来源：

PHYSICAL REVIEW LETTERS | 1995年 / 74卷 / 14期

关键词：

D O I：

10.1103/PhysRevLett.74.2682

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

We report intersubband-scattering times (T1) in a semiconductor heterostructure with intersubband spacing below the LO phonon energy. T1 is determined by simultaneous measurements of the intersubband absorption and the photovoltage induced by far-infrared radiation (FIR) near the intersubband transition frequency. At the lowest temperature (T=10 K) and FIR intensity (I=10 mW/cm2), T1=1.2±0.4 ns, several times longer than predicted theoretically. T1 decreases strongly with increasing temperature and FIR intensity, to 20 ps at T=50 K in the linear regime, and to 15 ps at T=10 K and I=2 kW/cm2. © 1995 The American Physical Society.

引用

页码：2682 / 2685

页数：4

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