UNDOPED, SEMI-INSULATING GAAS-LAYERS GROWN BY MOLECULAR-BEAM EPITAXY

被引：17

作者：

TEMKIN, H

HWANG, JCM

机构：

来源：

APPLIED PHYSICS LETTERS | 1983年 / 42卷 / 02期

关键词：

D O I：

10.1063/1.93866

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：178 / 180

页数：3

共 17 条

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[2]

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[3]

BRIONES F, 1981EMC

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EASTMAN, LF .

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[5] LOW-NOISE AND HIGH-POWER GAAS MICROWAVE FIELD-EFFECT TRANSISTORS PREPARED BY MOLECULAR-BEAM EPITAXY [J].

CHO, AY ;

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HEWITT, BS ;

NIEHAUS, WC ;

SCHLOSSER, WO ;

RADICE, C .

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[6]

Cox H. M., 1980, Semi-Insulating III-V Materials, P41

[7] CHARACTERIZATION OF HIGH-PURITY GAAS GROWN BY MOLECULAR-BEAM EPITAXY [J].

DINGLE, R ;

WEISBUCH, C ;

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CHO, AY .

APPLIED PHYSICS LETTERS, 1982, 40 (06) :507-510

[8]

HWANG JCM, APPL PHYS LETT

[9]

HWANG JH, UNPUB

[10]

Ilegems M., 1975, J APPL PHYS, V46, P3059

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