AMORPHOUS SILICON-INSULATOR INTERFACE STUDIES

被引:3
作者
CHAN, YK
JAYADEVAIAH, TS
机构
[1] UNIV MILWAUKEE, COLL ENGN & APPL SCI, MILWAUKEE, WI USA
[2] UNIV WISCONSIN, LAB SURFACE STUDIES, MILWAUKEE, WI USA
来源
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE | 1974年 / 24卷 / 02期
关键词
D O I
10.1002/pssa.2210240262
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
引用
收藏
页码:K177 / K179
页数:3
相关论文
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[7]   SI-SIO2 INTERFACE - ELECTRICAL PROPERTIES AS DETERMINED BY METAL-INSULATOR-SILICON CONDUCTANCE TECHNIQUE [J].
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