GROWTH AND CHARACTERIZATION OF EPITAXIAL SRF2 ON INP(100)

被引：12

作者：

SINHAROY, S ^{[1
]}

HOFFMAN, RA ^{[1
]}

RIEGER, JH ^{[1
]}

WARNER, JD ^{[1
]}

BHASIN, KB ^{[1
]}

机构：

[1] NASA,LEWIS RES CTR,CLEVELAND,OH 44135

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS | 1986年 / 4卷 / 03期

关键词：

D O I：

10.1116/1.574001

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

引用

页码：897 / 899

页数：3

共 9 条

[1] FAROW RFC, 1981, J VAC SCI TECHNOL, V19, P415
[2] CHEMICAL CLEANING OF INP SURFACES - OXIDE COMPOSITION AND ELECTRICAL-PROPERTIES
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[J]. JOURNAL OF APPLIED PHYSICS, 1984, 55 (04) : 1139 - 1148
[3] RUTHERFORD BACKSCATTERING CHANNELING AND TRANSMISSION ELECTRON-MICROSCOPY ANALYSIS OF EPITAXIAL BAF2 FILMS ON GE AND INP
PHILLIPS, JM
FELDMAN, LC
GIBSON, JM
MCDONALD, ML
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1983, 1 (02): : 246 - 249
[4] EPITAXIAL-GROWTH OF CAF2 ON GAAS(100)
SINHAROY, S
HOFFMAN, RA
RIEGER, JH
FARROW, RFC
NOREIKA, AJ
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1985, 3 (03): : 842 - 845
[5] PREPARATION OF A CLEAN GAAS(100) SURFACE WITHOUT GA OR AS VAPOR SOURCES
SINHAROY, S
HOFFMAN, RA
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1984, 31 (08) : 1090 - 1092
[6] INSULATING EPITAXIAL-FILMS OF BAF2, CAF2 AND BAXCA1-XF2 GROWN BY MBE ON INP SUBSTRATES
SULLIVAN, PW
FARROW, RFC
JONES, GR
[J]. JOURNAL OF CRYSTAL GROWTH, 1982, 60 (02) : 403 - 413
[7] LATTICE-MATCHED SINGLE-CRYSTALLINE DIELECTRIC FILMS (BAXSR1-XF2) ON INP(001) GROWN BY MOLECULAR-BEAM EPITAXY
TU, CW
SHENG, TT
MACRANDER, AT
PHILLIPS, JM
GUGGENHEIM, HJ
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1984, 2 (01): : 24 - 26
[8] GROWTH OF SINGLE-CRYSTALLINE EPITAXIAL GROUP-II FLUORIDE FILMS ON INP(001) BY MOLECULAR-BEAM EPITAXY
TU, CW
SHENG, TT
READ, MH
SCHLIER, AR
JOHNSON, JG
JOHNSTON, WD
BONNER, WA
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1983, 130 (10) : 2081 - 2087
[9] EPITAXIAL INP/FLUORIDE/INP(001) DOUBLE HETEROSTRUCTURES GROWN BY MOLECULAR-BEAM EPITAXY
TU, CW
FORREST, SR
JOHNSTON, WD
[J]. APPLIED PHYSICS LETTERS, 1983, 43 (06) : 569 - 571

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