THE EVIDENCE FOR INTERACTION OF THE N-N PAIR WITH OXYGEN IN CZOCHRALSKI SILICON

被引：48

作者：

QI, MW ^{[1
]}

TAN, SS ^{[1
]}

ZHU, B ^{[1
]}

CAI, PX ^{[1
]}

GU, WF ^{[1
]}

XU, XM ^{[1
]}

SHI, TS ^{[1
]}

QUE, DL ^{[1
]}

LI, LB ^{[1
]}

机构：

[1] ZHEJIANG UNIV,SEMICOND MAT RES INST,ZHEJIANG,PEOPLES R CHINA

来源：

JOURNAL OF APPLIED PHYSICS | 1991年 / 69卷 / 06期

关键词：

D O I：

10.1063/1.348476

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Evidence for interaction between the N-N pair and interstitial O in N-doped Czochralski silicon has been presented by studying the annealing behavior of the corresponding IR absorption bands.

引用

页码：3775 / 3777

页数：3

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