HOT-ELECTRON EMISSION FROM SEMICONDUCTORS

被引：14

作者：

HODGKINSON, RJ

机构：

来源：

关键词：

D O I：

10.1016/0038-1101(62)90109-0

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：269 / &

共 9 条

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[4] ELECTRON EMISSION FROM BREAKDOWN REGIONS IN SIC P-N JUNCTIONS [J].

PATRICK, L ;

CHOYKE, WJ .

PATRICK, L .

[6]

SENITZKY B, 1959, PHYS REV, V116, P874

[7] PHOTOEMISSION FROM SI INDUCED BY AN INTERNAL ELECTRIC FIELD [J].

SIMON, RE ;

SPICER, WE .

PHYSICAL REVIEW, 1960, 119 (02) :621-622

[8]

SIMON RE, 1961, J APPL PHYS, V31, P1505

[9] ELECTRON EMISSION FROM SILICON P-N JUNCTIONS [J].

TAUC, J .