PHOTOEMISSION FROM SI INDUCED BY AN INTERNAL ELECTRIC FIELD

[1] BOK J, COMMUNICATION

[2] ELECTRON EMISSION FROM AVALANCHE BREAKDOWN IN SILICON [J]. PHYSICAL REVIEW, 1957, 108 (05): : 1342 - 1343

[3] INTRINSIC OPTICAL ABSORPTION IN SINGLE-CRYSTAL GERMANIUM AND SILICON AT 77-DEGREES-K AND 300-DEGREES-K [J]. PHYSICAL REVIEW, 1955, 99 (04): : 1151 - 1155

[4] PHOTOCONDUCTIVITY AND PHOTOELECTRIC EMISSION OF BARIUM OXIDE [J]. PHYSICAL REVIEW, 1951, 83 (04): : 805 - 811

[5] DEVORE HB, 1952, RCA REV, V13, P453

[6] ELECTRON EMISSION FROM BREAKDOWN REGIONS IN SIC P-N JUNCTIONS [J]. PHYSICAL REVIEW LETTERS, 1959, 2 (02) : 48 - 50

[7] PHOTOEMISSIVE, PHOTOCONDUCTIVE, AND OPTICAL ABSORPTION STUDIES OF ALKALI-ANTIMONY COMPOUNDS [J]. PHYSICAL REVIEW, 1958, 112 (01): : 114 - 122

[8] SPICER WE, 1960, B AM PHYS SOC, V5, P69

[9] ELECTRON EMISSION FROM SILICON P-N JUNCTIONS [J]. NATURE, 1958, 181 (4601) : 38 - 38

[1] BOK J, COMMUNICATION

[2] ELECTRON EMISSION FROM AVALANCHE BREAKDOWN IN SILICON [J]. PHYSICAL REVIEW, 1957, 108 (05): : 1342 - 1343

[3] INTRINSIC OPTICAL ABSORPTION IN SINGLE-CRYSTAL GERMANIUM AND SILICON AT 77-DEGREES-K AND 300-DEGREES-K [J]. PHYSICAL REVIEW, 1955, 99 (04): : 1151 - 1155

[4] PHOTOCONDUCTIVITY AND PHOTOELECTRIC EMISSION OF BARIUM OXIDE [J]. PHYSICAL REVIEW, 1951, 83 (04): : 805 - 811

[5] DEVORE HB, 1952, RCA REV, V13, P453

[6] ELECTRON EMISSION FROM BREAKDOWN REGIONS IN SIC P-N JUNCTIONS [J]. PHYSICAL REVIEW LETTERS, 1959, 2 (02) : 48 - 50

[7] PHOTOEMISSIVE, PHOTOCONDUCTIVE, AND OPTICAL ABSORPTION STUDIES OF ALKALI-ANTIMONY COMPOUNDS [J]. PHYSICAL REVIEW, 1958, 112 (01): : 114 - 122

[8] SPICER WE, 1960, B AM PHYS SOC, V5, P69

[9] ELECTRON EMISSION FROM SILICON P-N JUNCTIONS [J]. NATURE, 1958, 181 (4601) : 38 - 38