MICROSCOPIC SPATIAL FLUCTUATIONS OF THE EL2 DEFECT IN SEMI-INSULATING GAAS - INFLUENCE ON BULK RESISTIVITY AND CORRELATION WITH IMPLANT ACTIVATION

被引：15

作者：

ALT, HC

SCHINK, H

机构：

来源：

APPLIED PHYSICS LETTERS | 1988年 / 52卷 / 20期

关键词：

D O I：

10.1063/1.99050

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1661 / 1663

页数：3

共 13 条

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ALT, HC ;

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APPLIED PHYSICS LETTERS, 1985, 47 (06) :602-604

[4] COMPENSATION MECHANISM IN LIQUID ENCAPSULATED CZOCHRALSKI GAAS - IMPORTANCE OF MELT STOICHIOMETRY [J].

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CHEN, RT ;

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YU, PW .

IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 1982, 30 (07) :949-955

[5] EFFECT OF DISLOCATIONS ON SHEET CARRIER CONCENTRATION OF SI-IMPLANTED, SEMI-INSULATING, LIQUID-ENCAPSULATED CZOCHRALSKI GROWN GAAS [J].

HYUGA, F .

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[6]

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[7] INFLUENCE OF MELT COMPOSITION ON THE LONGITUDINAL DISTRIBUTION OF MIDGAP NATIVE DONOR CONCENTRATION IN SEMIINSULATING LIQUID-ENCAPSULATED CZOCHRALSKI GAAS CRYSTAL [J].

KATSUMATA, T ;

OKADA, H ;

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FUKUDA, T .

JOURNAL OF APPLIED PHYSICS, 1986, 60 (09) :3105-3110

[8] OPTICAL ASSESSMENT OF THE MAIN ELECTRON TRAP IN BULK SEMI-INSULATING GAAS [J].

MARTIN, GM .

APPLIED PHYSICS LETTERS, 1981, 39 (09) :747-748

[9] COMPENSATION MECHANISMS IN GAAS [J].

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[10]

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