PHENOMENOLOGY OF PICOSECOND HEATING AND EVAPORATION OF SILICON SURFACES COATED WITH SIO2 LAYERS

被引：15

作者：

LIU, JM ^{[1
]}

LOMPRE, LA ^{[1
]}

KURZ, H ^{[1
]}

BLOEMBERGEN, N ^{[1
]}

机构：

[1] HARVARD UNIV,DIV APPL SCI,GORDON MCKAY LAB,CAMBRIDGE,MA 02138

来源：

APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING | 1984年 / 34卷 / 01期

关键词：

D O I：

10.1007/BF00617570

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

收藏

页码：25 / 29

页数：5

相关论文

共 10 条

[1] FAN JCC, 1983, MATERIALS RES SOC C
[2] LASER ANNEALING OF BIPOLAR NPN TRANSISTORS
HENDEL, RH
CASEY, DD
BICKFORD, CU
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1981, 18 (03): : 818 - 820
[3] PHASE-TRANSFORMATION ON AND CHARGED-PARTICLE EMISSION FROM A SILICON CRYSTAL-SURFACE, INDUCED BY PICOSECOND LASER-PULSES
LIU, JM
YEN, R
KURZ, H
BLOEMBERGEN, N
[J]. APPLIED PHYSICS LETTERS, 1981, 39 (09) : 755 - 757
[4] PICOSECOND TIME-RESOLVED PLASMA AND TEMPERATURE-INDUCED CHANGES OF REFLECTIVITY AND TRANSMISSION IN SILICON
LIU, JM
KURZ, H
BLOEMBERGEN, N
[J]. APPLIED PHYSICS LETTERS, 1982, 41 (07) : 643 - 646
[5] LIU JM, 1982, THESIS HARVARD U
[6] TIME-RESOLVED TEMPERATURE-MEASUREMENT OF PICOSECOND LASER IRRADIATED SILICON
LOMPRE, LA
LIU, JM
KURZ, H
BLOEMBERGEN, N
[J]. APPLIED PHYSICS LETTERS, 1983, 43 (02) : 168 - 170
[7] NARAYAN J, 1983, LASER SOLID INTERACT
[8] TIME-RESOLVED REFLECTIVITY MEASUREMENTS OF FEMTOSECOND-OPTICAL-PULSE INDUCED PHASE-TRANSITIONS IN SILICON
SHANK, CV
YEN, R
HIRLIMANN, C
[J]. PHYSICAL REVIEW LETTERS, 1983, 50 (06) : 454 - 457
[9] WOLF HF, 1969, SILICON SEMICONDUCTO, P642
[10] WOLF HF, 1971, SEMICONDUCTORS+, P375