FIELD-EFFECT IN DC-SPUTTERED A-SI-H IN STRUCTURE USING SINX PREPARED INSITU

被引:13
作者
SMID, V
DUNG, NM
STOURAC, L
JUREK, K
机构
关键词
D O I
10.1016/0022-3093(85)90087-0
中图分类号
TQ174 [陶瓷工业]; TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
引用
收藏
页码:1 / 8
页数:8
相关论文
共 19 条
[1]   THIN-FILM FIELD-EFFECT TRANSISTORS INCORPORATING HYDROGENATED AMORPHOUS-SILICON PRODUCED BY RF MAGNETRON SPUTTERING [J].
ABDULRIDA, MC ;
ALLISON, J .
THIN SOLID FILMS, 1983, 102 (04) :L43-L46
[2]  
DEAL BE, 1974, J ELECTROCHEM SOC, V112, P198
[3]   DETERMINATION OF THE DENSITY OF GAP STATES - FIELD-EFFECT AND SURFACE-ADSORPTION [J].
FRITZSCHE, H .
SOLAR CELLS, 1980, 2 (03) :289-300
[4]   ANALYSIS OF FIELD-EFFECT AND CAPACITANCE-VOLTAGE MEASUREMENTS IN AMORPHOUS-SEMICONDUCTORS [J].
GOODMAN, NB ;
FRITZSCHE, H .
PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES, 1980, 42 (01) :149-165
[5]   A QUASI-STATIC TECHNIQUE FOR MOS C-V AND SURFACE STATE MEASUREMENTS [J].
KUHN, M .
SOLID-STATE ELECTRONICS, 1970, 13 (06) :873-+
[6]   BULK AND INTERFACE GAP STATES IN A-SI-H - A COMPARATIVE-STUDY OF FIELD-EFFECT AND CAPACITANCE MEASUREMENTS ON CO-DEPOSITED SAMPLES [J].
LACHTER, A ;
WEISFIELD, RL ;
PAUL, W .
SOLAR ENERGY MATERIALS, 1982, 7 (03) :263-279
[7]   AN INVESTIGATION OF SOME FUNDAMENTAL PROPERTIES OF A-SI FROM MEASUREMENTS OF INTERFACE AND SURFACE EFFECTS [J].
LECOMBER, PG ;
SPEAR, WE ;
GIBSON, RA ;
MANNSPERGER, H ;
DJAMDJI, F .
JOURNAL OF NON-CRYSTALLINE SOLIDS, 1983, 59-6 (DEC) :505-508
[8]   AMORPHOUS-SILICON FIELD-EFFECT DEVICE AND POSSIBLE APPLICATION [J].
LECOMBER, PG ;
SPEAR, WE ;
GHAITH, A .
ELECTRONICS LETTERS, 1979, 15 (06) :179-181
[9]   RF ANNEALING MECHANISMS IN METAL-OXIDE-SEMICONDUCTOR STRUCTURES - AN EXPERIMENTAL SIMULATION [J].
MA, TP ;
CHIN, MR .
JOURNAL OF APPLIED PHYSICS, 1980, 51 (10) :5458-5463
[10]   AMORPHOUS-SILICON IMAGE SENSOR IC [J].
MATSUMURA, M ;
HAYAMA, H ;
NARA, Y ;
ISHIBASHI, K .
ELECTRON DEVICE LETTERS, 1980, 1 (09) :182-184