INVESTIGATION OF (111) STRAINED LAYERS - GROWTH, PHOTOLUMINESCENCE, AND INTERNAL ELECTRIC-FIELDS

被引：10

作者：

HARSHMAN, PJ ^{[1
]}

WANG, S ^{[1
]}

机构：

[1] UNIV CALIF BERKELEY,ELECTR RES LAB,BERKELEY,CA 94720

来源：

JOURNAL OF APPLIED PHYSICS | 1992年 / 71卷 / 11期

关键词：

D O I：

10.1063/1.350527

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

It has been found that AlAs, AlGaAs, and AlInAs layers grown on 2-degrees misoriented (111)B GaAs substrates by molecular beam epitaxy are much smoother than corresponding (111)GaAs layers. The quality of Al containing (111)B layers is further demonstrated by the narrow (65 angstrom) photoluminescence peak from an AlAs/Al0.5In0.5As strained multiquantum well structure. The photoluminescence spectra of this structure is considered in detail, with particular attention paid to Stark effects associated with strain-generated internal electric fields. Spectral movement of the photoluminescence peak as a function of excitation intensity suggests the attainment of self-biased strained quantum wells.

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页码：5531 / 5538

页数：8

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