LOW-LOSS CHANNEL WAVE-GUIDES FABRICATED IN FUSED-SILICA BY GERMANIUM ION-IMPLANTATION

被引：16

作者：

LEECH, PW ^{[1
]}

KEMENY, PC ^{[1
]}

RIDGWAY, MC ^{[1
]}

机构：

[1] AUSTRALIAN NATL UNIV,CANBERRA,ACT 0200,AUSTRALIA

来源：

ELECTRONICS LETTERS | 1995年 / 31卷 / 15期

关键词：

OPTICAL WAVE-GUIDE; SILICON DIOXIDE; ION IMPLANTATION;

D O I：

10.1049/el:19950848

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The authors report the first low loss channel waveguides (0.10-0.15 dB/cm) Formed in fused silica by the implantation of MeV Ge ions. The loss coefficient or was measured as a function of ion dose (8 x 10(13) - 8 X 10(16) ion/cm(2)) and annealing temperature (250 to 600 degrees C) at 1300nm. The as-implanted waveguides exhibited a minimum value of alpha = 0.9dB/cm at an intermediate range of dose with a reduction to 0.10-0.15dB/cm after annealing at 500 degrees C.

引用

页码：1238 / 1240

页数：3

共 8 条

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[3]

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[5]

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[6]

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[7]

VERHAEGEN M, 1995, 9TH P ICIBMM

[8] CHANGES IN CHEMICAL STABILITY OF ION-IMPLANTED SILICA GLASS [J].

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