CAPACITANCE OF MOS DIODES ON SUBSTRATES DOPED NONUNIFORMLY NEAR-SURFACE

被引：4

作者：

FELTL, H ^{[1
]}

机构：

[1] SIEMENS AG,GESCHAFTSBEREICH DATENVERARBEITUNG,MUNICH,FED REP GER

来源：

SOLID-STATE ELECTRONICS | 1976年 / 19卷 / 06期

关键词：

D O I：

10.1016/0038-1101(76)90001-0

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

收藏

页码：425 / 431

页数：7

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