INTERFACE CHARACTERIZATION OF ZNSE/GAAS HETEROJUNCTIONS

被引：2

作者：

HARIU, T ^{[1
]}

YAMAUCHI, S ^{[1
]}

TANAKA, H ^{[1
]}

ONO, S ^{[1
]}

机构：

[1] TOHOKU UNIV,ELECT COMMUN RES INST,SENDAI,MIYAGI 980,JAPAN

来源：

APPLIED SURFACE SCIENCE | 1991年 / 48-9卷

关键词：

D O I：

10.1016/0169-4332(91)90331-D

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

ZnSe/GaAs heterojunctions were fabricated by a low-temperature plasma-assisted totally dry process consisting of removal of the native oxide layer in a hydrogen plasma, surface treatment in hydrogen plasma containing Se or nitrogen and epitaxial growth of ZnSe in the same chamber. The surface states consist of defect-related surface states superposed on a disorder-induced U-shaped distribution. The energetic position and the density of defect-related surface states, which was clearly revealed when the density of surface states with U-shaped distribution was reduced, depends upon the surface treatment and also upon the GaAs wafers used.

引用

页码：204 / 208

页数：5

共 10 条

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