GROWTH OF SIO2-FILMS ON SI IN AN OXYGEN MICROWAVE-DISCHARGE

被引：9

作者：

DRAGILA, R ^{[1
]}

BARDOS, L ^{[1
]}

LONCAR, G ^{[1
]}

机构：

[1] CZECH TECH UNIV, FAC NUCL SCI & PHYS ENGN, DEPT ELECTR, CS11519 PRAHA 1, CZECHOSLOVAKIA

来源：

关键词：

D O I：

10.1016/0040-6090(76)90146-2

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：115 / 117

页数：3

相关论文

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[4] SILICON OXIDATION IN AN OXYGEN PLASMA EXCITED BY MICROWAVES [J].

LIGENZA, JR .

[5] PROPERTIES OF PLASMA-GROWN SIO2 FILMS [J].

SKELT, ER ;

HOWELLS, GM .