SEMIQUANTITATIVE MODEL FOR THE OXIDE BIAS EXPERIMENT AND ITS APPLICATION TO THE STUDY OF P+ NN+ PHOTODIODE DEGRADATION

被引：10

作者：

VERDEBOUT, J ^{[1
]}

机构：

[1] NBS,DIV RADIOMETR PHYS,WASHINGTON,DC 20234

来源：

APPLIED OPTICS | 1984年 / 23卷 / 23期

关键词：

D O I：

10.1364/AO.23.004339

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

引用

页码：4339 / 4344

页数：6

共 11 条

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[9] THE NEAR ULTRAVIOLET QUANTUM YIELD OF SILICON [J].

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[10] SILICON PHOTO-DIODE ABSOLUTE SPECTRAL RESPONSE SELF-CALIBRATION [J].

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