STUDIES OF SIOX ANODIC NATIVE OXIDE INTERFACES ON INSB

被引：20

作者：

CALAHORRA, Z ^{[1
]}

BREGMAN, J ^{[1
]}

SHAPIRA, Y ^{[1
]}

机构：

[1] TEL AVIV UNIV,FAC ENGN,IL-69978 TEL AVIV,ISRAEL

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1986年 / 4卷 / 05期

关键词：

D O I：

10.1116/1.583483

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1195 / 1202

页数：8

共 48 条

[1] COMPOSITION, CHEMICAL BONDING, AND CONTAMINATION OF LOW-TEMPERATURE SIOXNY INSULATING FILMS [J].

ANDERSON, GW ;

SCHMIDT, WA ;

COMAS, J .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1978, 125 (03) :424-430

[2] STUDY OF SILICON-OXYGEN INTERACTION WITH STATICAL METHOD OF SECONDARY ION MASS SPECTROSCOPY (SIMS) [J].

BENNINGHOVEN, A ;

STORP, S .

APPLIED PHYSICS LETTERS, 1973, 22 (04) :170-171

[3]

BLAGODAROV AN, 1980, SOV PHYS SEMICOND, V14, P363

[4] OXIDE AND INTERFACE PROPERTIES OF PLASMA-GROWN AND WET ANODIC OXIDES OF INSB METAL-OXIDE SEMICONDUCTOR-DEVICES [J].

BREGMAN, J ;

SHAPIRA, Y ;

CALAHORRA, Z ;

GOSHEN, R .

THIN SOLID FILMS, 1985, 125 (3-4) :347-353

[5] QUANTITATIVE AUGER ANALYSIS BY DEPTH PROFILING OF LINE-SHAPES - APPLICATION TO NATIVE OXIDE-INSB INTERFACES [J].

BREGMAN, J ;

SHAPIRA, Y .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1985, 3 (04) :959-963

[6] AUGER ANALYSIS OF INSB IR DETECTOR ARRAYS [J].

CHAN, WS ;

WAN, JT .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1977, 14 (02) :718-722

[7]

DAVIS LE, 1976, HDB AUGER ELECTRON S

[8] INTERFACE STATE DENSITY AND OXIDE CHARGE MEASUREMENTS ON METAL-ANODIC-OXIDE-INSB SYSTEM [J].

ETCHELLS, A ;

FISCHER, CW .

JOURNAL OF APPLIED PHYSICS, 1976, 47 (10) :4605-4610

[9]

GERGEL VA, 1983, SOV PHYS SEMICOND+, V17, P641

[10] OPTICAL PROPERTIES OF SILICON MONOXIDE IN THE WAVELENGTH REGION FROM 0.24 TO 14.0 MICRONS [J].

HASS, G ;

SALZBERG, CD .

JOURNAL OF THE OPTICAL SOCIETY OF AMERICA, 1954, 44 (03) :181-187

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