Temperature and dose dependence of damage production in Si+ and Se+ implanted InP

The damage evolution in Si+ implanted InP was investigated in the temperature region between 80 and 393 K by means of the RES/channelling technique. Up to the implantation temperature T-I approximate to 363 K, the damage concentration increases continuously with the ion fluence up to a critical fluence above which amorphous layers are formed. In this temperature region, amorphization is achieved by overlap and successive accumulation of heavily damaged and amorphous clusters. Above a critical temperature at or near 400 K, the mechanisms change markedly. Over a broad range of fluences (less than or equal to 5X10(15) cm(-2)) the enhanced mobility of point defects leads to dissociation of the primarily produced damage cascades and no amorphization is observed. Mainly point defects and point defect complexes are created at these low fluences, however, amorphization does occur in a narrow very high dose region (10(16) cm(-2)) by a collapse-like transition. A similar behaviour was also found for Se+ implantation with a critical temperature of about 430 K.