ARF EXCIMER LASER DOPING OF BORON INTO SILICON

被引：22

作者：

KATO, S

NAGAHORI, T

MATSUMOTO, S

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1987年 / 62卷 / 09期

关键词：

D O I：

10.1063/1.339245

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：3656 / 3659

页数：4

共 14 条

[1]

BEADLE WE, 1985, QUICK REFERENCE MANU, P4

[2] ULTRA-SHALLOW HIGH-CONCENTRATION BORON PROFILES FOR CMOS PROCESSING [J].

CAREY, PG ;

SIGMON, TW ;

PRESS, RL ;

FAHLEN, TS .

IEEE ELECTRON DEVICE LETTERS, 1985, 6 (06) :291-293

[3] EFFICIENT SI SOLAR-CELLS BY LASER PHOTOCHEMICAL DOPING [J].

DEUTSCH, TF ;

FAN, JCC ;

TURNER, GW ;

CHAPMAN, RL ;

EHRLICH, DJ ;

OSGOOD, RM .

APPLIED PHYSICS LETTERS, 1981, 38 (03) :144-146

[4] ELECTRICAL-PROPERTIES OF LASER CHEMICALLY DOPED SILICON [J].

DEUTSCH, TF ;

EHRLICH, DJ ;

RATHMAN, DD ;

SILVERSMITH, DJ ;

OSGOOD, RM .

APPLIED PHYSICS LETTERS, 1981, 39 (10) :825-827

[5]

EHRLICH DJ, 1983, J VAC SCI TECHNOL B, V1, P969, DOI 10.1116/1.582718

[6]

GROVE AS, 1967, PHYSICS TECHNOLOGY S, P65

[7]

IBBS KG, 1983, MATER RES SOC S P, V17, P243

[8]

JELLISON GE, 1982, APPL PHYS LETT, V41, P180, DOI 10.1063/1.93454

[9]

Kodera H., 1963, JAP J APPL PHYS, V2, P212, DOI [10.1143/JJAP.2.212, DOI 10.1143/JJAP.2.212]

[10] CHANNELING EFFECT OF LOW-ENERGY BORON IMPLANT IN (100) SILICON [J].

LIU, TM ;

OLDHAM, WG .

IEEE ELECTRON DEVICE LETTERS, 1983, 4 (03) :59-62

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