AN ELECTRON-STIMULATED DESORPTION STUDY OF THE INTERACTION OF HYDROGEN, DEUTERIUM AND OXYGEN WITH GAAS(100)

被引：7

作者：

CORALLO, CF

ASBURY, DA

PIPKIN, MA

ANDERSON, TJ

HOFLUND, GB

机构：

来源：

THIN SOLID FILMS | 1986年 / 139卷 / 03期

关键词：

D O I：

10.1016/0040-6090(86)90059-3

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：299 / 310

页数：12

共 43 条

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[2]

BACHRACH RZ, 1982, J PHYS C SOLID STATE, V5, P145

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DOHERTY, CJ ;

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[5] HYDROGEN CHEMISORPTION ON THE POLAR SURFACES OF GAAS [J].

BRINGANS, RD ;

BACHRACH, RZ .

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[6] THE EFFECT OF HYDROGEN CHEMISORPTION ON GAAS(100) AND GAAS(1BAR1BAR1BAR) [J].

BRINGANS, RD ;

BACHRACH, RZ .

SOLID STATE COMMUNICATIONS, 1983, 45 (02) :83-86

[7] THE INTERACTION OF HYDROGEN WITH SURFACE-STATES ON GAAS(100) [J].

BRINGANS, RD ;

BACHRACH, RZ .

PHYSICA B & C, 1983, 117 (MAR) :854-856

[8] EFFECT OF H-2 ON RESIDUAL IMPURITIES IN GAAS MBE LAYERS [J].

CALAWA, AR .

APPLIED PHYSICS LETTERS, 1978, 33 (12) :1020-1022

[9] HYDROGEN PLASMA-ETCHING OF GAAS OXIDE [J].

CHANG, RPH ;

DARACK, S .

APPLIED PHYSICS LETTERS, 1981, 38 (11) :898-900

[10] DONOR NEUTRALIZATION IN GAAS(SI) BY ATOMIC-HYDROGEN [J].

CHEVALLIER, J ;

DAUTREMONTSMITH, WC ;

TU, CW ;

PEARTON, SJ .

APPLIED PHYSICS LETTERS, 1985, 47 (02) :108-110

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