OXYGEN IN GALLIUM-PHOSPHIDE - A CANONICAL DEEP DONOR

被引：12

作者：

DEAN, PJ

机构：

来源：

PHYSICA B & C | 1983年 / 117卷 / MAR期

关键词：

D O I：

10.1016/0378-4363(83)90464-3

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

页码：140 / 145

页数：6

共 30 条

[21]

KOPYLOV AA, 1977, SOV PHYS SEMICOND+, V11, P510

[22]

KUKIMOTO H, 1973, PHYS REV B, V7, P2499

[23] FAST CAPACITANCE TRANSIENT APPARATUS - APPLICATION TO ZNO AND O CENTERS IN GAP PARANORMAL JUNCTIONS [J].

LANG, DV .

JOURNAL OF APPLIED PHYSICS, 1974, 45 (07) :3014-3022

[24]

MONEMAR B, 1981, RECENT DEV CONDENSED, V1, P441

[25] 2-ELECTRON PHOTOIONIZATION FROM DEEP STATES IN SEMICONDUCTORS [J].

MORGAN, TN .

JOURNAL OF ELECTRONIC MATERIALS, 1975, 4 (05) :1029-1036

[26]

MORGAN TN, UNPUB PHYS REV LETT

[27] ANOMALOUS WIDTH OF SOME PHOTOEXCITATION LINES OF IMPURITIES IN SILICON [J].

ONTON, A ;

FISHER, P ;

RAMDAS, AK .

PHYSICAL REVIEW LETTERS, 1967, 19 (14) :781-&

[28] OPTICAL-TRANSITIONS VIA DEEP O-DONOR IN GAP .2. TEMPERATURE-DEPENDENCE OF CROSS-SECTIONS [J].

SAMUELSON, L ;

MONEMAR, B .

PHYSICAL REVIEW B, 1978, 18 (02) :830-843

[29] SPECTROSCOPY OF EXCITED ACCEPTOR STATES IN GAP [J].

STREET, RA ;

SENSKE, W .

PHYSICAL REVIEW LETTERS, 1976, 37 (19) :1292-1295

[30] ISOELECTRONIC TRAPS DUE TO NITROGEN IN GALLIUM PHOSPHIDE [J].

THOMAS, DG ;

HOPFIELD, JJ ;

FROSCH, CJ .

PHYSICAL REVIEW LETTERS, 1965, 15 (22) :857-&

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