OPTICAL BISTABILITY AT THE BAND-GAP IN INAS

被引：37

作者：

POOLE, CD

GARMIRE, E

机构：

来源：

APPLIED PHYSICS LETTERS | 1984年 / 44卷 / 04期

关键词：

D O I：

10.1063/1.94777

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

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页码：363 / 365

页数：3

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共 15 条

[1] ENERGY LEVELS OF DIRECT EXCITONS IN SEMICONDUCTORS WITH DEGENERATE BANDS
BALDERESCHI, A
LIPARI, NO
[J]. PHYSICAL REVIEW B-SOLID STATE, 1971, 3 (02): : 439 - +
[2] ENHANCED BANDGAP RESONANT NON-LINEAR SUSCEPTIBILITY IN QUANTUM-WELL HETEROSTRUCTURES
BURT, MG
[J]. ELECTRONICS LETTERS, 1983, 19 (04) : 132 - 133
[3] Chang L. L., 1980, Journal of the Physical Society of Japan, V49, P997
[4] SPATIAL SEPARATION OF CARRIERS IN INAS-GASB SUPER-LATTICES
CHANG, LL
SAIHALASZ, GA
ESAKI, L
AGGARWAL, RL
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1981, 19 (03): : 589 - 591
[5] DIMMOCK JO, 1967, SEMICONDUCT SEMIMET, V3, pCH7
[6] THEORY OF GAUSSIAN-BEAM OPTICAL BISTABILITY
FIRTH, WJ
WRIGHT, EM
[J]. OPTICS COMMUNICATIONS, 1982, 40 (03) : 233 - 238
[7] OPTICAL BISTABILITY IN SEMICONDUCTORS
GIBBS, HM
MCCALL, SL
VENKATESAN, TNC
GOSSARD, AC
PASSNER, A
WIEGMANN, W
[J]. APPLIED PHYSICS LETTERS, 1979, 35 (06) : 451 - 453
[8] NON-LINEAR REFRACTIVE-INDEX CHANGES IN CDHGTE AT 175 K WITH 10.6-MU-M RADIATION
HILL, JR
PARRY, G
MILLER, A
[J]. OPTICS COMMUNICATIONS, 1982, 43 (02) : 151 - 156
[9] LOW-TEMPERATURE PHOTOMAGNETOELECTRIC AND PHOTOCONDUCTIVE EFFECTS IN N-TYPE INAS
LI, SS
HUANG, CI
[J]. PHYSICAL REVIEW B, 1971, 4 (12): : 4633 - &
[10] REFRACTIVE FABRY-PEROT BISTABILITY WITH LINEAR ABSORPTION - THEORY OF OPERATION AND CAVITY OPTIMIZATION
MILLER, DAB
[J]. IEEE JOURNAL OF QUANTUM ELECTRONICS, 1981, 17 (03) : 306 - 311