DC AND MICROWAVE CHARACTERISTICS OF INALAS/INGAAS SINGLE-QUANTUM-WELL MODFETS WITH GAAS GATE BARRIERS

被引：8

作者：

HONG, WP

BHATTACHARYA, P

机构：

[1] UNIV MICHIGAN,CTR HIGH FREQUENCY MICROELECTR,ANN ARBOR,MI 48109

[2] UNIV MICHIGAN,DEPT ELECT ENGN & COMP SCI,SOLID STATE ELECTR LAB,ANN ARBOR,MI 48109

来源：

IEEE ELECTRON DEVICE LETTERS | 1988年 / 9卷 / 07期

关键词：

D O I：

10.1109/55.741

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：352 / 354

页数：3

共 11 条

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[10] STUDIES ON AN IN0.53GA0.47AS/IN0.52AL0.48AS SINGLE-QUANTUM-WELL QUASI-MISFET [J].

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