PHOTOCHEMICAL PREPARATION OF CRYSTALLINE SILICON NANOCLUSTERS

[1] THE QUANTUM-MECHANICS OF LARGER SEMICONDUCTOR CLUSTERS (QUANTUM DOTS) [J]. ANNUAL REVIEW OF PHYSICAL CHEMISTRY, 1990, 41 : 477 - 496

[2] SILICON QUANTUM WIRE ARRAY FABRICATION BY ELECTROCHEMICAL AND CHEMICAL DISSOLUTION OF WAFERS [J]. APPLIED PHYSICS LETTERS, 1990, 57 (10) : 1046 - 1048

[3] QUANTUM YIELD STUDIES OF DISILANE PHOTODISSOCIATION AT 193 NM BY INFRARED DIODE-LASER SPECTROSCOPY [J]. CHEMICAL PHYSICS LETTERS, 1989, 155 (06) : 576 - 582

[4] SILANE PURIFICATION VIA LASER-INDUCED CHEMISTRY [J]. APPLIED PHYSICS LETTERS, 1978, 32 (01) : 46 - 49

[5] ARF LASER CVD OF HYDROGENATED AMORPHOUS-SILICON - THE ROLE OF BUFFER GASES [J]. APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 1989, 48 (05): : 405 - 414

[6] ARF LASER PHOTOCHEMICAL DEPOSITION OF AMORPHOUS-SILICON FROM DISILANE - SPECTROSCOPIC STUDIES AND COMPARISON WITH THERMAL CVD [J]. APPLIED SURFACE SCIENCE, 1989, 36 (1-4) : 70 - 80

[7] ERES D, 1989, J MATER RES SOC S P, V131, P517

[8] RAMAN-SCATTERING FROM QUANTUM DOTS OF GE EMBEDDED IN SIO2 THIN-FILMS [J]. APPLIED PHYSICS LETTERS, 1990, 57 (25) : 2692 - 2694

[9] GROWTH OF GE MICROCRYSTALS IN SIO2 THIN-FILM MATRICES - A RAMAN AND ELECTRON-MICROSCOPIC STUDY [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1991, 30 (04): : 687 - 694

[10] QUANTUM SIZE EFFECTS ON THE OPTICAL BAND-GAP OF MICROCRYSTALLINE SI-H [J]. PHYSICAL REVIEW B, 1988, 38 (08): : 5726 - 5729

[1] THE QUANTUM-MECHANICS OF LARGER SEMICONDUCTOR CLUSTERS (QUANTUM DOTS) [J]. ANNUAL REVIEW OF PHYSICAL CHEMISTRY, 1990, 41 : 477 - 496

[2] SILICON QUANTUM WIRE ARRAY FABRICATION BY ELECTROCHEMICAL AND CHEMICAL DISSOLUTION OF WAFERS [J]. APPLIED PHYSICS LETTERS, 1990, 57 (10) : 1046 - 1048

[3] QUANTUM YIELD STUDIES OF DISILANE PHOTODISSOCIATION AT 193 NM BY INFRARED DIODE-LASER SPECTROSCOPY [J]. CHEMICAL PHYSICS LETTERS, 1989, 155 (06) : 576 - 582

[4] SILANE PURIFICATION VIA LASER-INDUCED CHEMISTRY [J]. APPLIED PHYSICS LETTERS, 1978, 32 (01) : 46 - 49

[5] ARF LASER CVD OF HYDROGENATED AMORPHOUS-SILICON - THE ROLE OF BUFFER GASES [J]. APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 1989, 48 (05): : 405 - 414

[6] ARF LASER PHOTOCHEMICAL DEPOSITION OF AMORPHOUS-SILICON FROM DISILANE - SPECTROSCOPIC STUDIES AND COMPARISON WITH THERMAL CVD [J]. APPLIED SURFACE SCIENCE, 1989, 36 (1-4) : 70 - 80

[7] ERES D, 1989, J MATER RES SOC S P, V131, P517

[8] RAMAN-SCATTERING FROM QUANTUM DOTS OF GE EMBEDDED IN SIO2 THIN-FILMS [J]. APPLIED PHYSICS LETTERS, 1990, 57 (25) : 2692 - 2694

[9] GROWTH OF GE MICROCRYSTALS IN SIO2 THIN-FILM MATRICES - A RAMAN AND ELECTRON-MICROSCOPIC STUDY [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1991, 30 (04): : 687 - 694

[10] QUANTUM SIZE EFFECTS ON THE OPTICAL BAND-GAP OF MICROCRYSTALLINE SI-H [J]. PHYSICAL REVIEW B, 1988, 38 (08): : 5726 - 5729