PHOTOLUMINESCENCE OF HEAVILY P-TYPE-DOPED GAAS - TEMPERATURE AND CONCENTRATION DEPENDENCES

被引：15

作者：

CHEN, HD ^{[1
]}

FENG, MS ^{[1
]}

CHEN, PA ^{[1
]}

LIN, KC ^{[1
]}

WU, JW ^{[1
]}

机构：

[1] NATL CHIAO TUNG UNIV,INST MAT SCI & ENGN,HSINCHU 300,TAIWAN

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1994年 / 33卷 / 4A期

关键词：

PHOTOLUMINESCENCE; HEAVILY CARBON-DOPED GAAS; HEAVILY ZINC-DOPED GAAS;

D O I：

10.1143/JJAP.33.1920

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Photoluminescent (PL) properties of heavily carbon- and zinc-doped GaAs were investigated for concentration from 8 X 10(17) to 2.3 x 10(20) cm-3 and temperature from 300 K to 20 K. Both a band-to-band (B, B) peak and a band-to-acceptor (e, A) peak appeared at 300 K for the heavily p-type-doped GaAs PL spectra, even in degenerated GaAs. The variation of the intensities of the (e, A) peak and (B, B) peak with concentration and temperature was investigated, and the change in position of the two peaks at various concentrations and temperatures was observed. The rapid increase in linewidth with increasing concentration due to the appearance of a shoulder peak was also studied; this behavior is different from that of the shoulder peak in the PL spectrum from Zn-doped crystal.

引用

页码：1920 / 1927

页数：8

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