GEOMETRIC AND ELECTRONIC-STRUCTURE OF EPITAXIAL IRON SILICIDES

被引：28

作者：

ALVAREZ, J

DEPARGA, ALV

HINAREJOS, JJ

DELAFIGUERA, J

MICHEL, EG

OCAL, C

MIRANDA, R

机构：

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS | 1993年 / 11卷 / 04期

关键词：

D O I：

10.1116/1.578329

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

The geometric and electronic structure of several iron silicide phases epitaxially grown on Si(111)7X7 have been characterized by means of surface sensitive techniques including scanning tunneling microscopy (STM), x-ray photoelectron spectroscopy, ion scattering spectroscopy (ISS), and ultraviolet photoelectron spectroscopy. The silicides were grown by solid-phase and reactive-deposition epitaxy, and their stability range was determined in situ as a function of iron coverage and annealing temperature. In particular, we have studied the phases appearing in the low-coverage low-temperature region. Additionally, the crystallites of the most important FeSi2 phases (gamma-FeSi2 and beta-FeSi2) have been characterized at atomic level with STM, while the surface termination was analyzed with ISS.

引用

页码：929 / 933

页数：5

共 17 条

[1] SURFACE CHARACTERIZATION OF EPITAXIAL, SEMICONDUCTING, FESI2 GROWN ON SI(100) [J].