SYNTHETIC NON-LINEAR SEMICONDUCTORS

[11] VOLTAGE-TUNABLE FAR-INFRARED EMISSION FROM SI INVERSION LAYERS [J]. PHYSICAL REVIEW LETTERS, 1976, 37 (21) : 1425 - 1428

[12] FREE-CARRIER INFRARED ABSORPTION IN 3-V SEMICONDUCTORS 3. GAAS INP GAP + GASB [J]. JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN, 1964, 19 (05) : 658 - &

[13] QUANTUM-WELL HETEROSTRUCTURE LASERS [J]. IEEE JOURNAL OF QUANTUM ELECTRONICS, 1980, 16 (02) : 170 - 186

[14] CALCULATION OF SURFACE-STATES IN ACCUMULATION LAYER OF TELLURIUM [J]. SOLID STATE COMMUNICATIONS, 1977, 22 (03) : 165 - 168

[15] Keyes R. W., 1976, Comments on Solid State Physics, V7, P53

[16] EIGENSTATES, COHERENT STATES, AND UNCERTAINTY PRODUCTS FOR THE MORSE OSCILLATOR [J]. PHYSICAL REVIEW A, 1979, 19 (02): : 438 - 444

[17] ORLOV KL, 1976, SOV J RADIOPHYS, V19, P1315

[18] OPTICAL NONLINEARITIES DUE TO MOBILE CARRIERS IN SEMICONDUCTORS [J]. PHYSICAL REVIEW LETTERS, 1966, 17 (19) : 1011 - &

[19] SHIK AY, 1975, SOV PHYS SEMICOND+, V8, P1195

[20] SELF-CONSISTENT RESULTS FOR N-TYPE SI INVERSION LAYERS [J]. PHYSICAL REVIEW B, 1972, 5 (12): : 4891 - &

[11] VOLTAGE-TUNABLE FAR-INFRARED EMISSION FROM SI INVERSION LAYERS [J]. PHYSICAL REVIEW LETTERS, 1976, 37 (21) : 1425 - 1428

[12] FREE-CARRIER INFRARED ABSORPTION IN 3-V SEMICONDUCTORS 3. GAAS INP GAP + GASB [J]. JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN, 1964, 19 (05) : 658 - &

[13] QUANTUM-WELL HETEROSTRUCTURE LASERS [J]. IEEE JOURNAL OF QUANTUM ELECTRONICS, 1980, 16 (02) : 170 - 186

[14] CALCULATION OF SURFACE-STATES IN ACCUMULATION LAYER OF TELLURIUM [J]. SOLID STATE COMMUNICATIONS, 1977, 22 (03) : 165 - 168

[15] Keyes R. W., 1976, Comments on Solid State Physics, V7, P53

[16] EIGENSTATES, COHERENT STATES, AND UNCERTAINTY PRODUCTS FOR THE MORSE OSCILLATOR [J]. PHYSICAL REVIEW A, 1979, 19 (02): : 438 - 444

[17] ORLOV KL, 1976, SOV J RADIOPHYS, V19, P1315

[18] OPTICAL NONLINEARITIES DUE TO MOBILE CARRIERS IN SEMICONDUCTORS [J]. PHYSICAL REVIEW LETTERS, 1966, 17 (19) : 1011 - &

[19] SHIK AY, 1975, SOV PHYS SEMICOND+, V8, P1195

[20] SELF-CONSISTENT RESULTS FOR N-TYPE SI INVERSION LAYERS [J]. PHYSICAL REVIEW B, 1972, 5 (12): : 4891 - &