DOPANT STATES IN A-SI-H .2. EFFECTS OF H AND F

被引：21

作者：

ROBERTSON, J ^{[1
]}

机构：

[1] UNIV ILLINOIS,DEPT PHYS,URBANA,IL 61801

来源：

PHYSICAL REVIEW B | 1983年 / 28卷 / 08期

关键词：

D O I：

10.1103/PhysRevB.28.4658

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：4658 / 4665

页数：8

共 57 条

[1] ELECTRONIC STATES AND TOTAL ENERGIES IN HYDROGENATED AMORPHOUS-SILICON [J].

ALLAN, DC ;

JOANNOPOULOS, JD ;

POLLARD, WB .

PHYSICAL REVIEW B, 1982, 25 (02) :1065-1080

[2] HYDROGEN EVOLUTION AND DEFECT CREATION IN AMORPHOUS SI-H ALLOYS [J].

BIEGELSEN, DK ;

STREET, RA ;

TSAI, CC ;

KNIGHTS, JC .

PHYSICAL REVIEW B, 1979, 20 (12) :4839-4846

[3] QUANTITATIVE-ANALYSIS OF HYDROGEN IN GLOW-DISCHARGE AMORPHOUS SILICON [J].

BRODSKY, MH ;

FRISCH, MA ;

ZIEGLER, JF ;

LANFORD, WA .

APPLIED PHYSICS LETTERS, 1977, 30 (11) :561-563

[4] ANGULAR FORCES AND VALENCE FORCE-FIELD IN C AND SI [J].

BULLETT, DW .

JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1975, 8 (19) :3108-3114

[5] CHEMICAL PSEUDOPOTENTIAL APPROACH TO COVALENT BONDING .2. BOND LENGTHS AND BOND-ENERGIES IN DIAMOND, SILICON AND GRAPHITE [J].

BULLETT, DW .

JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1975, 8 (17) :2707-2714

[6] CHEMICAL PSEUDOPOTENTIAL APPROACH TO COVALENT BONDING .1. [J].

BULLETT, DW .

JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1975, 8 (17) :2695-2706

[7] ELECTRONIC STATES AND BONDING CONFIGURATIONS IN HYDROGENATED AMORPHOUS-SILICON [J].

CHING, WY ;

LAM, DJ ;

LIN, CC .

PHYSICAL REVIEW B, 1980, 21 (06) :2378-2387

[8] SMALL-ANGLE-SCATTERING EVIDENCE OF VOIDS IN HYDROGENATED AMORPHOUS SILICON [J].

DANTONIO, P ;

KONNERT, JH .

PHYSICAL REVIEW LETTERS, 1979, 43 (16) :1161-1163

[9] LIGHT-INDUCED DANGLING BONDS IN HYDROGENATED AMORPHOUS-SILICON [J].

DERSCH, H ;

STUKE, J ;

BEICHLER, J .

APPLIED PHYSICS LETTERS, 1981, 38 (06) :456-458

[10]

DEVINCENZO J, 1981, TETRAHEDRALLY BONDED, P156

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