EFFECT OF THERMAL DONOR FORMATION ON THE PHOTOACOUSTIC SPECTRA OF P-SI SINGLE-CRYSTALS

被引：4

作者：

HIGASHI, K ^{[1
]}

IKARI, T ^{[1
]}

YOKOYAMA, H ^{[1
]}

FUTAGAMI, K ^{[1
]}

机构：

[1] MIYAZAKI UNIV,DEPT ELECT,1-1 GAKUEN KIBANADAI,MIYAZAKI 88921,JAPAN

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1993年 / 32卷 / 5B期

关键词：

PHOTOACOUSTIC SPECTRA; P-SI; THERMAL DONOR; NONRADIATIVE RECOMBINATION;

D O I：

10.1143/JJAP.32.2570

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Photoacoustic (PA) measurements of p-Si single crystals annealed at 450-degrees-C were carried out at room temperature near an optical absorption edge. The height of the pronounced peak at 1.07 eV, which appears only in the p-type samples, becomes smaller and disappear with an increase in the annealing time. Since annealing facilitates the thermal donor formation, the decrease in the peak height is explained by the compensation mechanism of the boron acceptors. The reappearance of the 1.07 eV peak with further annealing at 800-degrees-C for 30 minutes, where thermal donors are swept away, firmly supports our explanation.

引用

页码：2570 / 2572

页数：3

共 6 条

[1]

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[3]

IKARI T, 1992, IN PRESS IEEE T ULTR, V40

[4]

Pankove J.I., 1971, OPTICAL PROCESSES SE, P160

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SUMINO, K .

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