ELECTRIC-FIELD CONTROLLABLE PHOTOLUMINESCENCE IN POROUS SILICON

被引：10

作者：

LUE, JT ^{[1
]}

LO, KY ^{[1
]}

MA, SK ^{[1
]}

CHEN, CL ^{[1
]}

CHANG, CS ^{[1
]}

机构：

[1] NATL TSING HUA UNIV,DEPT ELECT ENGN,HSINCHU 300,TAIWAN

来源：

SOLID STATE COMMUNICATIONS | 1993年 / 86卷 / 09期

关键词：

D O I：

10.1016/0038-1098(93)90146-E

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

Intense photoluminescences (PL) at wavelengths near 600 nm are observed when either the (100) or (111) surface of the electrochemically etched silicon wafers are illuminated by the 514.5 nm argon laser line. A fascinating phenomenon has been discovered indicating that the PL intensity can be suppressed exhaustively by applying an electric field parallel to the surface. The PL recovers its intensity very slowly when the bias is taken off, suggesting that the slow relaxation of the accumulate charges inside the porous silicon.

引用

页码：593 / 596

页数：4

共 10 条

[1] THE ORIGIN OF VISIBLE LUMINESCENCE FROM POROUS SILICON - A NEW INTERPRETATION [J].