ELECTRONIC TRANSPORT-PROPERTIES OF TANTALUM DISILICIDE THIN-FILMS

被引：31

作者：

HUANG, MT ^{[1
]}

MARTIN, TL ^{[1
]}

MALHOTRA, V ^{[1
]}

MAHAN, JE ^{[1
]}

机构：

[1] COLORADO STATE UNIV,CONDENSED MAT SCI LAB,FT COLLINS,CO 80523

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1985年 / 3卷 / 03期

关键词：

D O I：

10.1116/1.583113

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：836 / 845

页数：10

共 48 条

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IRENE, EA
MACINNES, R
PETERSSON, CS
SAVOY, R
SEGMULLER, AP
TIERNEY, E
[J]. JOURNAL OF ELECTRONIC MATERIALS, 1981, 10 (01) : 59 - 93
[2] Barrett C.S., 1980, STRUCTURE METALS
[3] BASS J, 1972, ADV PHYS, V21, P504
[4] BUBE RH, 1974, ELECT PROPERTIES CRY, pCH10
[5] BUTLER WH, 1981, TREATISE MATERIALS S, V21, P165
[6] REFRACTORY-METAL SILICIDES - THIN-FILM PROPERTIES AND PROCESSING TECHNOLOGY
CHOW, TP
STECKL, AJ
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1983, 30 (11) : 1480 - 1497
[7] CRACKNELL AP, 1973, FERMI SURFACE, pCH5
[8] DHEURLE FM, 1982, VLSI SCI TECHNOLOGY, P194
[9] NMOS SILICIDE POLYSILICON GATES BY LIFT-OFF REACTIVE SPUTTER ETCHING
FRASER, DB
KINSBRON, E
VRATNY, F
JOHNSTON, RL
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1982, 20 (03): : 491 - 492
[10] GOLDSCHMIDT HJ, 1967, INTERSTITIAL ALLOYS, P306