A COMPARATIVE-STUDY OF COMMERCIAL INDIUM-PHOSPHIDE SUBSTRATES

被引：6

作者：

QUINLAN, KP

机构：

[1] Rome Air Development Center, Solid State Sciences Directorate, Massachusetts 01731, Hanscom Air Force Base

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1990年 / 137卷 / 06期

关键词：

D O I：

10.1149/1.2086847

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

[No abstract available]

引用

页码：1991 / 1995

页数：5

共 16 条

[1] INGAASP INP PLANAR-STRIPE LASERS WITH CHEMICALLY ETCHED MIRRORS [J].

ADACHI, S ;

KAWAGUCHI, H ;

IWANE, G .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1982, 129 (04) :883-886

[2] ETCH FEATURES IN CZOCHRALSKI-GROWN SINGLE-CRYSTAL INDIUM-PHOSPHIDE [J].

BROWN, GT ;

COCKAYNE, B ;

MACEWAN, WR .

JOURNAL OF MATERIALS SCIENCE, 1980, 15 (10) :2539-2549

[3]

BROWN GT, 1981, I PHYSICS C SERIES, V60, P351

[4] EFFECTS OF SUBSTRATE POLISHING ON DOUBLE-HETEROSTRUCTURE ALYGA1-YAS-ALXGA1-XAS LASERS GROWN BY MOLECULAR-BEAM EXPITAXY [J].

CALDWELL, PJ ;

LAIDIG, WD ;

LIN, YF ;

PENG, CK ;

MAGEE, TJ ;

LEUNG, C .

JOURNAL OF APPLIED PHYSICS, 1985, 57 (03) :984-986

[5] DISLOCATION STUDIES IN 3-INCH DIAMETER LIQUID ENCAPSULATED CZOCHRALSKI GAAS [J].

CHEN, RT ;

HOLMES, DE .

JOURNAL OF CRYSTAL GROWTH, 1983, 61 (01) :111-124

[6] BROMINE METHANOL POLISHING OF (100) INP SUBSTRATES [J].

CHIN, BH ;

BARLOW, KL .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1988, 135 (12) :3120-3125

[7] NEW DISLOCATION ETCHANT FOR INP [J].

CHU, SNG ;

JODLAUK, CM ;

BALLMAN, AA .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1982, 129 (02) :352-354

[8] THE EFFECT OF A CONTINUOUS ETCH ON THE GROWTH-RATE AND MORPHOLOGY OF INP PREPARED BY THE VAPOR-PHASE EPITAXIAL-HYDRIDE METHOD [J].

ERSTFELD, TE ;

QUINLAN, KP .

JOURNAL OF ELECTRONIC MATERIALS, 1982, 11 (04) :647-662

[9] METALLOGRAPHIC DEVELOPMENT OF CRYSTAL DEFECTS IN INP [J].

HUBER, A ;

LINH, NT .

JOURNAL OF CRYSTAL GROWTH, 1975, 29 (01) :80-84

[10] A THERMOELASTIC ANALYSIS OF DISLOCATION GENERATION IN PULLED GAAS CRYSTALS [J].

JORDAN, AS ;

CARUSO, R ;

VONNEIDA, AR .

BELL SYSTEM TECHNICAL JOURNAL, 1980, 59 (04) :593-637

← 1 2 →