COOPER-MINIMUM EFFECTS IN THE PHOTO-IONIZATION CROSS-SECTIONS OF 4D AND 5D ELECTRONS IN SOLID COMPOUNDS

被引:91
作者
ROSSI, G [1 ]
LINDAU, I [1 ]
BRAICOVICH, L [1 ]
ABBATI, I [1 ]
机构
[1] POLITECN MILAN, IST FIS, I-20133 MILAN, ITALY
关键词
D O I
10.1103/PhysRevB.28.3031
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
引用
收藏
页码:3031 / 3042
页数:12
相关论文
共 46 条
  • [1] SOLID-STATE EFFECTS ON THE VALENCE-BAND 4D-PHOTOIONIZATION CROSS-SECTIONS AT THE COOPER MINIMUM
    ABBATI, I
    BRAICOVICH, L
    ROSSI, G
    LINDAU, I
    DELPENNINO, U
    NANNARONE, S
    [J]. PHYSICAL REVIEW LETTERS, 1983, 50 (22) : 1799 - 1802
  • [2] REACTIVE GERMANIUM TRANSITION-METAL INTERFACES INVESTIGATED WITH SYNCHROTRON RADIATION PHOTOEMISSION - GE/NI AND GE/PD
    ABBATI, I
    ROSSI, G
    BRAICOVICH, L
    LINDAU, I
    SPICER, WE
    [J]. APPLIED SURFACE SCIENCE, 1981, 9 (1-4) : 243 - 249
  • [3] EXPLOITING ENERGY-DEPENDENT PHOTOEMISSION IN SI D-METAL INTERFACES - THE SI(111)-PD CASE
    ABBATI, I
    ROSSI, G
    LINDAU, I
    SPICER, WE
    [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1981, 19 (03): : 636 - 640
  • [4] PHOTOIONIZATION-CROSS-SECTION STUDIES OF ATOMIC AND FINAL-STATE EFFECTS ON PB-5D-CORE LEVELS USING SYNCHROTRON RADIATION
    BANCROFT, GM
    GUDAT, W
    EASTMAN, DE
    [J]. PHYSICAL REVIEW B, 1978, 17 (12): : 4499 - 4504
  • [5] XENON 4D5/2-4D3/2 PHOTOELECTRON INTENSITY RATIO IN THE REGION OF THE COOPER MINIMUM
    BANNA, MS
    KRAUSE, MO
    WUILLEUMIER, F
    [J]. JOURNAL OF PHYSICS B-ATOMIC MOLECULAR AND OPTICAL PHYSICS, 1979, 12 (04) : L125 - L129
  • [6] TRANSITION-METAL SILICIDES - ASPECTS OF THE CHEMICAL-BOND AND TRENDS IN THE ELECTRONIC-STRUCTURE
    BISI, O
    CALANDRA, C
    [J]. JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1981, 14 (35): : 5479 - 5494
  • [7] ELECTRONIC-PROPERTIES OF METAL-RICH AU SI COMPOUNDS AND INTERFACES
    BISI, O
    CALANDRA, C
    BRAICOVICH, L
    ABBATI, I
    ROSSI, G
    LINDAU, I
    SPICER, WE
    [J]. JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1982, 15 (22): : 4707 - 4716
  • [8] BRAICOVICH L, 1980, J VAC SCI TECHNOL, V17, P1005, DOI 10.1116/1.570581
  • [9] PHOTOEMISSION-STUDIES OF THE SILICON GOLD INTERFACE
    BRAICOVICH, L
    GARNER, CM
    SKEATH, PR
    SU, CY
    CHYE, PW
    LINDAU, I
    SPICER, WE
    [J]. PHYSICAL REVIEW B, 1979, 20 (12): : 5131 - 5141
  • [10] ENERGY-DEPENDENT PHOTOEMISSION IN THE STUDY OF SILICON-D METAL INTERFACES
    BRAICOVICH, L
    [J]. THIN SOLID FILMS, 1983, 104 (3-4) : 327 - 335