COMPLETE DIELECTRIC ISOLATION BY HIGHLY SELECTIVE AND SELF-STOPPING FORMATION OF OXIDIZED POROUS SILICON

被引：27

作者：

HOLMSTROM, RP

CHI, JY

机构：

来源：

APPLIED PHYSICS LETTERS | 1983年 / 42卷 / 04期

关键词：

D O I：

10.1063/1.93916

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

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页码：386 / 388

页数：3

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