SUSTAINING MECHANISMS IN RF PLASMAS

[1] ANDERSON GS, 1962, J APPL PHYS, V33, P299

[2] ION RESPONSE TO PLASMA EXCITATION-FREQUENCY [J]. JOURNAL OF APPLIED PHYSICS, 1981, 52 (12) : 7064 - 7066

[3] BRUCE RH, 1980, 1980 P MICR ENG 80 I

[4] CHAPMAN B, 1980, GLOW DISCHARGE PROCE, P82

[5] CHAPMAN B, 1980, GLOW DISCHARGE PROCE, P117

[6] FRANCIS G, 1960, IONIZATION PHENOMENA, P34

[7] THE RF VOLTAGE CURRENT CHARACTERISTICS AND RELATED DC NEGATIVE BIAS PROPERTIES OF AN ELECTROTECH FLAT BED PLASMA ETCHER [J]. VACUUM, 1982, 32 (05) : 297 - 303

[8] LANGMUIR PROBE STUDIES OF THE GLOW-DISCHARGE IN AN RF SPUTTERING SYSTEM AT VARIOUS FREQUENCIES [J]. VACUUM, 1979, 29 (11-1) : 443 - 445

[1] ANDERSON GS, 1962, J APPL PHYS, V33, P299

[2] ION RESPONSE TO PLASMA EXCITATION-FREQUENCY [J]. JOURNAL OF APPLIED PHYSICS, 1981, 52 (12) : 7064 - 7066

[3] BRUCE RH, 1980, 1980 P MICR ENG 80 I

[4] CHAPMAN B, 1980, GLOW DISCHARGE PROCE, P82

[5] CHAPMAN B, 1980, GLOW DISCHARGE PROCE, P117

[6] FRANCIS G, 1960, IONIZATION PHENOMENA, P34

[7] THE RF VOLTAGE CURRENT CHARACTERISTICS AND RELATED DC NEGATIVE BIAS PROPERTIES OF AN ELECTROTECH FLAT BED PLASMA ETCHER [J]. VACUUM, 1982, 32 (05) : 297 - 303

[8] LANGMUIR PROBE STUDIES OF THE GLOW-DISCHARGE IN AN RF SPUTTERING SYSTEM AT VARIOUS FREQUENCIES [J]. VACUUM, 1979, 29 (11-1) : 443 - 445