Nitrogen-doping efficiency in ZnSe and ZnTe

被引：3

作者：

Cheong, BH ^{[1
]}

Chang, KJ ^{[1
]}

机构：

[1] KOREA ADV INST SCI & TECHNOL,DEPT PHYS,TAEJON,SOUTH KOREA

来源：

ICDS-18 - PROCEEDINGS OF THE 18TH INTERNATIONAL CONFERENCE ON DEFECTS IN SEMICONDUCTORS, PTS 1-4 | 1995年 / 196-卷

关键词：

nitrogen impurity; compensation; doping efficiency;

D O I：

10.4028/www.scientific.net/MSF.196-201.303

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We perform first-principles pseudopotential calculations to explain the difference in nitrogen-doping levels between ZnSe and ZnTe. Calculating the formation energies for various N-related and native defects, rye estimate the hole carrier density in ZnSe to be about 10(18) cm(-3), in good agreement with experiments. In ZnTe, the formation energy of a N acceptor is found to be lower by about 0.13 eV, thus, the hole carrier density is higher by about 5 times, compared with ZnSe. At high doping levels above 10(19) cm(-3), the doping efficiency falls rapidly due to the neutralization by inert N-2 molecules or the compensation effect by split-interstitial N-N complexes, depending on stoichiometry.

引用

页码：303 / 307

页数：5

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