CATHODOLUMINESCENCE SPECTROSCOPY OF METAL-SEMICONDUCTOR INTERFACE STRUCTURES

被引：27

作者：

BRILLSON, LJ

VITURRO, RE

SHAW, JL

RICHTER, HW

机构：

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS | 1988年 / 6卷 / 03期

关键词：

D O I：

10.1116/1.575722

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

引用

页码：1437 / 1445

页数：9

共 78 条

[41] MECHANISM FOR ANNEALING-INDUCED CHANGES IN THE ELECTRICAL CHARACTERISTICS OF AL/GAAS AND AL/INP SCHOTTKY CONTACTS
NEWMAN, N
SPICER, WE
WEBER, ER
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1987, 5 (04): : 1020 - 1029
[42] CATHODOLUMINESCENCE STUDIES OF ANOMALOUS ION-IMPLANTATION DEFECT INTRODUCTION IN CDTE
NORRIS, CB
BARNES, CE
ZANIO, KR
[J]. JOURNAL OF APPLIED PHYSICS, 1977, 48 (04) : 1659 - 1667
[43] DEPTH-RESOLVED CATHODOLUMINESCENCE IN UNDAMAGED AND ION-IMPLANTED GAAS, ZNS, AND CDS
NORRIS, CB
BARNES, CE
BEEZHOLD, W
[J]. JOURNAL OF APPLIED PHYSICS, 1973, 44 (07) : 3209 - 3221
[44] PAQLUERAS J, 1985, SOLID STATE COMMUN, V54, P745
[45] Petroff P M, 1978, SCANNING ELECTRON MI, V1, P325
[46] PETROFF PM, 1985, SEMICONDUCT SEMIMET, V22, P379
[47] IMPURITY TRAPPING, INTERFACE STRUCTURE, AND LUMINESCENCE OF GAAS QUANTUM WELLS GROWN BY MOLECULAR-BEAM EPITAXY
PETROFF, PM
MILLER, RC
GOSSARD, AC
WIEGMANN, W
[J]. APPLIED PHYSICS LETTERS, 1984, 44 (02) : 217 - 219
[48] PETROFF PM, 1980, CIRCUITS MANUFACTURI, V4, P35
[49] DEPTH-RESOLVED CATHODOLUMINESCENCE OF ION-IMPLANTED LAYERS IN ZINC-OXIDE
PIERCE, BJ
HENGEHOLD, RL
[J]. JOURNAL OF APPLIED PHYSICS, 1976, 47 (02) : 644 - 651
[50] RAKSHIT S, 1971, PHYS STATUS SOLIDI A, V1, P593