UNIFORM DEPOSITION IN CVD REACTORS WITH MOUNTED WAFER CONFIGURATION

被引:3
作者
HONG, JC
LEE, HH
机构
关键词
D O I
10.1016/0022-0248(85)90381-1
中图分类号
O7 [晶体学];
学科分类号
0702 ; 070205 ; 0703 ; 080501 ;
摘要
引用
收藏
页码:711 / 717
页数:7
相关论文
共 7 条
[1]  
ABRAMOWITZ M, 1965, HDB MATH FUNCTIONS, pCH9
[2]   THE DEPOSITION OF SILICON FROM SILANE IN A LOW-PRESSURE HOT-WALL SYSTEM [J].
CLAASSEN, WAP ;
BLOEM, J ;
VALKENBURG, WGJN ;
VANDENBREKEL, CHJ .
JOURNAL OF CRYSTAL GROWTH, 1982, 57 (02) :259-266
[3]  
CLAASSEN WAP, 1981, PHILIPS J RES, V36, P124
[4]   MODELING OF LOW-PRESSURE CVD PROCESSES [J].
KUIPER, AET ;
VANDENBREKEL, CJH ;
DEGROOT, J ;
VELTKAMP, GW .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1982, 129 (10) :2288-2291
[5]  
LEE HH, UNPUB J CRYSTAL GROW
[6]  
Sagan H, 1961, BOUNDARY EIGENVALUE
[7]   LOW-PRESSURE DEPOSITION OF POLYCRYSTALLINE SILICON FROM SILANE [J].
VANDENBREKEL, CHJ ;
BOLLEN, LJM .
JOURNAL OF CRYSTAL GROWTH, 1981, 54 (02) :310-322