ETCHING TECHNIQUE FOR TRANSMISSION ELECTRON-MICROSCOPY OBSERVATION OF NANOSTRUCTURE OF VISIBLE LUMINESCENT POROUS SILICON

被引：19

作者：

TESCHKE, O ^{[1
]}

GONCALVES, MC ^{[1
]}

GALEMBECK, F ^{[1
]}

机构：

[1] UNICAMP,IQ,BR-13081-970 CAMPINAS,SP,BRAZIL

来源：

APPLIED PHYSICS LETTERS | 1993年 / 63卷 / 10期

关键词：

D O I：

10.1063/1.109673

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We present a special configuration for the electrochemical etching of silicon, in which thin samples suitable for direct transmission electron microscopy observation are produced. This technique allows the observation of images of an irregular matrix of pores and individual columnlike structures with a approximately 15 angstrom cross-sectional diameter. These images show that the preferential etching directions are the projections of the {100} planes on the (111) plane for the etched [111]-oriented silicon. The large pore ( > 50 nm diam) axis orientation is independent of the preferential etching direction and is parallel to the etching current direction.

引用

页码：1348 / 1350

页数：3

共 15 条

[1]

ANDERSON RM, 1975, UNPUB 33RD P ANN EL, P88

[2] MICROSTRUCTURE AND FORMATION MECHANISM OF POROUS SILICON [J].