MICROSTRUCTURE OF PORES IN N+ SILICON

被引：4

作者：

KAUSHIK, VS ^{[1
]}

DATYE, AK ^{[1
]}

TSAO, SS ^{[1
]}

GUILINGER, TR ^{[1
]}

KELLY, MJ ^{[1
]}

机构：

[1] SANDIA NATL LABS,ALBUQUERQUE,NM 87185

来源：

MATERIALS LETTERS | 1991年 / 11卷 / 3-4期

关键词：

D O I：

10.1016/0167-577X(91)90096-O

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The structure of pores in n-/n+/n- silicon structures has been studied by cross-section transmission electron microscopy. Under the experimental conditions examined, the pore directions in the n+ layer follow the current path and do not show crystallographic preference. Stray pores were observed in the n- layer and they appear to grow along <100> directions. By using cross sections transverse to the pore length, we have obtained end-on views that show that the pore walls tend to facet along {111} planes. We have also observed wafer surface faceting on {113} planes as a result of the anodization process.

引用

页码：109 / 114

页数：6

共 11 条

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