STUDY OF INALAS/INGAAS HETEROJUNCTION BIPOLAR-TRANSISTOR LAYERS BY OPTICALLY DETECTED CYCLOTRON-RESONANCE

被引:5
作者
CHEN, YF [1 ]
SHEN, JL [1 ]
DAI, YD [1 ]
JAN, GJ [1 ]
LIN, HH [1 ]
机构
[1] NATL TAIWAN UNIV,DEPT ELECT ENGN,TAIPEI 10764,TAIWAN
关键词
D O I
10.1063/1.113161
中图分类号
O59 [应用物理学];
学科分类号
摘要
We report an investigation of optical and electronic properties in InAlAs/InGaAs heterojunction bipolar transistor layers by optical detection of cyclotron resonance (ODCR). Strong ODCR spectra structured by quantum oscillations have been observed, from which the effective mass and the carrier concentration of the two‐dimensional electron gas can be obtained. The measured cyclotron mass is heavier than the conduction‐band‐edge mass in bulk InGaAs. We find that the carrier concentration increases with the spacer thickness. Quite unexpectedly, we also find that the effective mass increases with decreasing the carrier concentration. © 1995, American Institute of Physics. All rights reserved.
引用
收藏
页码:2543 / 2545
页数:3
相关论文
共 23 条
[1]  
ABSTREITER G, 1976, PHYS REV B, V14, P2480, DOI 10.1103/PhysRevB.14.2480
[2]   ELECTRONIC-PROPERTIES OF TWO-DIMENSIONAL SYSTEMS [J].
ANDO, T ;
FOWLER, AB ;
STERN, F .
REVIEWS OF MODERN PHYSICS, 1982, 54 (02) :437-672
[3]  
ANDO T, 1975, J PHYS SOC JPN, V38, P898
[4]  
BARANOV PG, 1977, JETP LETT+, V26, P249
[5]   DOUBLE HETEROJUNCTION NPN GAAIAS GAAS BIPOLAR-TRANSISTOR [J].
BENEKING, H ;
SU, LM .
ELECTRONICS LETTERS, 1982, 18 (01) :25-26
[6]  
CHEN WM, 1989, SURF SCI, V229, P484
[7]   SPIN SPITTING OF CYCLOTRON-RESONANCE IN THE CONDUCTION-BAND OF ZNTE [J].
DRECHSLER, M ;
EMANUELSSON, P ;
MEYER, BK ;
MAYER, H ;
ROSSLER, U ;
CLERJAUD, B .
PHYSICAL REVIEW B, 1994, 50 (04) :2649-2652
[8]   INP/INGAAS HETEROJUNCTION BIPOLAR-TRANSISTORS GROWN BY GAS-SOURCE MOLECULAR-BEAM EPITAXY WITH CARBON-DOPED BASE [J].
GEE, RC ;
CHIN, TP ;
TU, CW ;
ASBECK, PM ;
LIN, CL ;
KIRCHNER, PD ;
WOODALL, JM .
IEEE ELECTRON DEVICE LETTERS, 1992, 13 (05) :247-249
[9]   OPTIMUM EMITTER GRADING FOR HETEROJUNCTION BIPOLAR-TRANSISTORS [J].
HAYES, JR ;
CAPASSO, F ;
MALIK, RJ ;
GOSSARD, AC ;
WIEGMANN, W .
APPLIED PHYSICS LETTERS, 1983, 43 (10) :949-951
[10]   PHOTOREFLECTANCE CHARACTERIZATION OF AN INALAS/INGAAS HETEROSTRUCTURE BIPOLAR-TRANSISTOR [J].
HSU, KT ;
CHEN, YH ;
CHEN, KL ;
CHEN, HP ;
LIN, HH ;
JAN, GJ .
APPLIED PHYSICS LETTERS, 1994, 64 (15) :1974-1976